KONDUKTIVITAS DAN TRANSMITANSI FILM TIPIS zinc oxide YANG DIDEPOSISIKAN PADA TEMPERATUR RUANG

kiki wahyuningsih; Putut Marwoto; - Sulhadi

kiki wahyuningsih Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang
Putut Marwoto Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang
- Sulhadi Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang

Keywords: zinc oxide, plasma power, transmittance, conductivity

Abstract

zinc oxide thin films have been successfully deposited at room temperature with a plasma power 20 W, 30 W, and 40 W using dc magnetron sputtering method. The crystal structure of films were characterized using XRD (X-ray diffraction). Optical transmittance characterized by UV-vis spectrometer and electrical conductivity determined by analysis of results from I-V measurement. ZnO thin films on a plasma power of 30 W and 40 W have a polycrystalline structure, while the plasma power of 20 W has a crystalline structure that tends to amorphous. The orientation (100) has the highest intensity and the value of full width half maximum (FWHM) at the smallest plasma power 30 W. The resulting transmittance spectrum shows interference fringe pattern. Transmittance value the greater the enhancement of plasma with the largest value of ~ 92% owned plasma power 40 W. The magnitude of the energy gap depends on the amount of power generated at the plasma deposition. The resulting film conductivity value between 1.16 to 4.02 x10-6 x10-7 so that it can be applied for transparent conductive oxide (TCO)

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