PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION

B Astuti, A M Hashim

Abstract


Film tipis silikon karbida (SiC) telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD). Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD), FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111). Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan 950 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.

Silicon carbide (SiC) thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD) method has been done. Effect of deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD), FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111) orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and 950 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode. The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.



Keywords


SiC thin film, Hot-Mesh CVD, Deposition temperature

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