Alat Deteksi Gas Buang Kendaraan Bermotor Berstruktur Transistor Efek Medan

Sujarwata Sujarwata

Abstract


Fabrikasi alat deteksi berstruktur FET menggunakan metode vakum evaporasi (VE), sedangkan proses perencanaan dengan teknik lithography. Tahapan pembuatan sensor gas sebagai berikut: permulaan dilakukan pencucian substrat Si/ SiO2 dengan etanol dalam ultrasonic cleaner, kemudian dilakukan deposisi elektroda source dan drain di atas substrat, deposisi lapisan aktif diantara source/ drain dan diakhiri dengan deposisi gate. Hasil karakterisasi I-V menunjukkan arus yang mengalis dari drain menuju source (IDS)dipengaruhi oleh adanya perubahan tegangan gate (VG). Tegangan VGsemakin besar maka IDS yang dihasilkan semakin meningkat. Karakterisasi alat deteksi diperoleh bahwa daerah aktif untuk VD adalah 2,79 V - 3,43 V dan arus ID 1,49 10-4 A - 1,49 10-4 A. Sedangkan daerah saturasi FET pada tegangan VD dari 3,43 V - 9 V dan ini merupakan daerah cut off. Pengujian kelayakan alat deteksi adalah menentukan: waktu tanggap (response time)dan waktu pemulihan(recovery time ). Waktu tanggap sensor terhadap gas buang kendaraan bermotor,dan COberturut-turut: 135 s. Sedangkan waktu pemulihan adalah 150 s.


Keywords


FET, film tipis, response time, recovery time dan lithography

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DOI: https://doi.org/10.15294/jf.v5i1.7365

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