Efek Doping Co Pada Konstanta Kisi Film Tipis polikristal TiO2 yang Dideposisikan dengan Teknik MOCVD
(1) Program Studi Teknik Elektro FPTK, Universitas Pendidikan Indonesia
Abstract
Pendeposisian sejumlah film tipis Co:TiO2 telah selesai dilakukan. Film dideposisikan pada substrat Si(100) tipe-n menggunakan teknik MOCVD. Konsentrasi doping Co bervariasi dari 0,1 % sampai dengan 1,1 %. Penelitian ini difokuskan pada efek doping Co pada konstanta kisi film tipis polikristal TiO2. Hasil penelitian menunjukkan bahwa pemberian doping Co pada film TiO2 menyebabkan penyusutan konstanta kisi film tersebut.
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