Synthesis and Characterization of SnO2 Thin Layer with a Dopant Aluminium is Deposited on a Glass Substrate using a Spin Coating Technique
In this study, SnO2 and SnO2:Al thin films have been successfully deposited on glass substrates. Starting from Tin (II) chloride dihydrate as precursor, ethanol as solvent, and AlCl3 as dopant substance, the film was deposited by spin coating method. Structural and morphological analysis was carried out by X-Ray Diffraction (XRD) measurement and Scanning Electron Microscope (SEM). Optical characteristics were analyzed from the study of transmission and absorption spectrum data obtained by UV-Vis Spectrophotometer. Aluminum was added by various concentrations (5%, 10%, and 15%). Transmissions of visible light were better on the little concentrations of Al, but absorptions were lower too. The band gap energy was decreased by increasing the Al concentration. From XRD measurement, there were crystal system alterations. They were confirmed that SnO2 and SnO2 doped Al have cubic structure (by material phase classification of Al2O4Sn) because of the substrate compositions contained Al. In this study, XRD pattern shows that grain size of thin film decreased just after the Al dopant was added. EDX analysis confirms the presence of SnO2 and Al in thin film material deposited on glass substrate.