STRUKTUR DAN SIFAT OPTIK FILM TIPIS CdS DOPING Zn YANG DITUMBUHKAN DENGAN DC MAGNETRON SPUTTERING

  • Maulida Mitayani Prodi Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang, Indonesia,50229
  • Sugianto - Prodi Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang, Indonesia,50229
  • Putut Marwoto Prodi Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang, Indonesia,50229
Keywords: CdS, Zn, Grain size, Transmitance, Band Gap, Urbach Energy

Abstract

The Zn-doped CdS thin films have been deposited on corning glass substrate by DC magnetron sputtering. The growth parameters, such as Ar gas pressure 450 mTorr, substrate temperature 450°C, plasma power 24 W, and duration of growth are 3 hour. The samples are CdS, CdS:Zn(5%), and CdS:Zn(10%). X-ray diffraction (XRD) analysis showed that the crystal structure of CdS thin films was wurtzite (hexagonal). By using Scherrer formula obtained mean of grain size 280,5 Å, 311,7 Å, dan 234,0 Å. The optical properties analysis using UV-vis spectrometer, it was obtained that the optical transmittance of thin films in the visible wavelength were above of 55%, 68%, dan 48%, respectively. The optical band gap and Urbach energy of thin films were 2,40 eV, 2,50 eV, 2,53 eV and 0,38 eV, 0,34 eV, dan 0,80 eV, respectively

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