ANALISIS STRUKTUR DAN SIFAT OPTIK FILM TIPIS GALIUM OKSIDA DOPING SENG OKSIDA YANG DIDEPOSISIKAN MENGGUNAKAN METODE DC MAGNETRON SPUTTERING
Abstract
Zinc Oxide doped Gallium Oxide (Ga2O3:Zn) thin films have been successfully deposited at corning glass andsilicon (1 1 1) substrat with a plasma power 20.16 W with substrat temperature 600°C dan 635°C using dc
magnetron sputtering method. The crystal structure of films were characterized using XRD (X-ray diffraction).
Morphology films ware characterized using SEM (Scanning Electron Microscopic). Optical transmittance
characterized by UV-vis spectrometer. Ga2O3:Zn thin films on a substrat temperature of 600°C dan 635°C
have a polycrystalline structure. Have obtained Ga2O3 peak (0 1 2) and (2 1 10) and peak silicon (1 1 1) and
(4 4 4). The orientation (0 1 2) has the highest intensity and the value of full width half maximum (FWHM) at
the smallest substrat temperature 600°C. Transmittance value the smaller the increase in substrate temperature
with the largest value of 70% is owned by the substrate temperature of 600 ° C and 60% for a temperature of
635 ° C, with the magnitude of the resulting energy gap is relatively the same, namely 4.60 eV and 4.65 eV.
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