KAJIAN VARIASI SUHU ANNEALING DAN HOLDING TIME PADA PENUMBUHAN LAPISAN TIPIS BaZr0,15Ti0,85O3 DENGAN METODE SOL GEL
(1) Pascasarjana Ilmu Fisika, Universitas Sebelas Maret, Surakarta
(2) Pascasarjana Ilmu Fisika, Universitas Sebelas Maret, Surakarta
(3) Jurusan Fisika FMIPA, Universitas Haluoleo
(4) Departemen Fisika, Universitas Indonesia
(5) Departemen Fisika, Universitas Indonesia
(6) Pascasarjana Ilmu Fisika, Universitas Sebelas Maret, Surakarta
(7) Pascasarjana Ilmu Fisika, Universitas Sebelas Maret, Surakarta
Abstract
Penumbuhan lapisan tipis BaZr0,15Ti0,85O3 telah dilakukan menggunakan metode sol gel di atas substrat Pt/Si yang disiapkan dengan spin coater. Penumbuhan lapisan tipis menggunakan variasi suhu annealing 8000C dan 9000C, dan variasi waktu tahan (holding time) 3 jam dan 4 jam dengan kecepatan putar 4000 rpm. Hasil karakterisasi XRD menunjukkan, seiring dengan bertambahnya waktu tahan menunjukkan bertambahnya intensitas yang semakin tinggi. Hal ini menandakan tingkat kekristalan makin tinggi. Namun, dengan penambahan suhu annealing maka intensitas semakin kecil. Setelah dilakukan penghalusan menggunakan metode Rietveld dengan program GSAS, parameter kisi lapisan tipis BaZr0,15Ti0,85O3 semakin besar dengan bertambahnya suhu annealing dan waktu tahan serta memiliki struktur kristal tetragonal. Partikel size yang didapat dengan formula Scherer semakin besar seiring dengan bertambahnya suhu annealing dan waktu tahan. Hal ini juga ditunjukkan dari SEM, ukuran butir semakin besar seiring dengan bertambahnya suhu annealing, akan tetapi pada varisi suhu annealing ukuran butir tidak dapat ditentukan.
Thin Films BaZr0,15Ti0,85O3 have deposited on Pt/Si substrate by using sol gel method that was prepared by using spin coater. Deposition of thin films applies by using annealing temperatures in 8000C and 9000C, while the holding time was 3 and 4 hours and the rotation speed was 4000 rpm.The XRD characterization results show that the x-ray intensity increases along with the increasing of its holding time therefore it indicates that the crystallinity level is higher. Meanwhile the x-ray intensity decreases along with the increasing of annealing temperature. The refinement results using the Rietveld method with the GSAS program show that the thin films BaZr0.15Ti0.85O3 have tetragonal crystal structure and its lattice parameter value increases along with the increasing of its annealing temperature and holding time. Particle size obtained by Scherer formula was increasing along with the increasing of the annealing temperature and holding time. It was also shown from the SEM characterization results that the particle size increased along with the increasing of the annealing temperature but the grain size variation cannot determined.
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Azizahwati. 2002. Studi morfologi permukaan film tipis PbZr0,525Ti0,475O3 yang ditumbuhkan dengan metode DC Unblanced Magnetron Sputtering. Jurnal Natur Indonesia 5 (1): 50-56.
Chen X. 2010. Synthesis and morphology of Ba0. (Zr0.2Ti0.80)O3 power obained by sol-gel method. Paper. College of Materials Science and Engineering, Chengqing, China.
Djamas D. 2010. Penentuan microstructure lapisan tipis Cds menggunakan X-Ray Diffractometer. J EKSAKTA 11 (1): 9-19
Gao C, Jiwei Z & Yao X. 2008. Effect of seed layers on dielectric properties of Ba(Zr0,3Ti0,7)O3 thin films. J Electroceram. 21(1-4): 653-656
_________. 2005. Preparation and dielectric properties of Ba (ZrxTi1-x)O3 thin films rowth by sol gel process. Tongji Univesity. China. 74: 147-153.
Wang MC, Chen CY, His CS & Wu NC. 2003. Influence of deposition parameters on the dielectric properties of Rf Magnetron Sputtered Ba(Zrxti1-X)O3 Thin Films. J Eur Ceram Soc. 23: 2307–2314.
Uchino K. 2000. Ferroelectric Device. New York: Marcel Dekker.
Zhai, Yao JX & Chen H. 2004. Structural and Dielectric Properties of Ba0.85Sr0.15(Zr0.18Ti0.85)O3 Thin Films Grown by A Sol–gel Process. Appl Physics Lett. 30 (7): 1237–1240.
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