PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA
(1) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(2) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(3) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(4) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(5) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(6) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(7) Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
(8) Research Center for Physics, Indonesian Institute of Sciences, Indonesia
(9) Engineering Physics, School of Electrical Engineering, Telkom University, Indonesia
Abstract
Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al pada temperatur annealing 300°C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102 Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping dengan aluminium oksida pada temperature 300°C memiliki ukuran kristal yang semakin besar, kompak dan homogen.
Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter. Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 °C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300°C.
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