PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA

S Sugianto, R Zannah, S N Mahmudah, B Astuti, N M D.P, A A Wibowo, P Marwoto, D Ariyanto, E Wibowo

Abstract


Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al pada temperatur annealing 300C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102 Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping dengan aluminium oksida pada temperature 300C memiliki ukuran kristal yang semakin besar, kompak dan homogen.

Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter. Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300C.


Keywords


dc magnetron sputtering; thin film; optical property; ZnO doping Al

Full Text:

PDF

References


Ajimsha RS, Das AK, Singh BN, Misra P, & Kukreja LM. 2010. Structural, electrical and optical properties of dy doped ZnO thin ?lms grown by buffer assisted pulsed laser deposition. Physica E42: 1838-1843.

Amara S & Mohamed B. 2014. Investigation on optical, structural and electrical properties of annealed AZO/Al/AZO multilayer structures deposited by dc magnetron sputtering. J Mater Sci: Mater Electron 26 (3):

Balta AK, Ertek O, Eker N & Okur I. 2015. MgO and ZnO Composite Thin Films Using the Spin Coating Method on Microscope Glasses. Materials Science and Applications. 6: 40-47

Cao HT, Pei ZL, Gong J, Sun C, Huang RF, & Wen LS. 2004. Preparation and characterization of Al and Mn doped ZnO (ZnO:(Al, Mn)) transparent conducting oxide films. J Solid State Chem 177: 1480-1487.

Chaabouni F, Abaab M, & Rezig B. 2004. Effect of the substrate temperature on the properties of ZnO films grown by RF magnetron sputtering. Mater Sci Eng B 109: 236-240.

Firmaningsih R. 2015. Pengaruh Fraksi Mol Alumunium Oxide (Al2O3) terhadap Sifat Listrik dan Sifat Optik Film Tipis Zinc Oxide (ZnO)denganMetode DC Magnetron Sputtering. Skripsi. Semarang: FMIPA Unnes

Guillen C & Herrero J. 2010. Optical, electrical and structural characteristics of Al:ZnO thin ?lms with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum. Departamento de Energia, CIEMAT, Av. Complutense 22, 28040 Madrid, Spain.

Huang CS & Liu CC. 2015. The Optical and Electrical Properties of Gallium-Doped ZnO Thin Film with Post-Annealing Processes of Various Atmospheres. Microelectronic Engineering. 148: 59-63

Jiang JG, Lun YL, Yuan LW, Sun X, Wang Z, Wen Z, Ye Z, Xiao D, Ge HZ, Zhao Y. 2013. Tailoring the morphology, optical and electrical properties of DC-sputtered ZnO:Al ?lms by post thermal and plasma treatments. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Kang SJ & Yang HJ. 2007. In?uence of substrate temperature on the optical and piezoelectric properties of ZnO thin ?lms deposited by RF magnetron sputtering. Appl Surf Sci. 253: 7330-7335.

Kim CE, Moon P, Kim S, Myoung JM, Jang HW, Bang J, & Yun I. 2010. Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films. Thin Solid Films 518: 6304-6307.

Kim D-H, Jeon H, Kim G, Boe SH, Verma VP, Choi W, & Jeon M. 2007. Comparison of the Optical Properties of Undoped and Ga-doped ZnO Thin Films Deposited using RF Magnetron Sputtering at Room Temperatur. Opt Comun 281: 2120-2125.

Kuo SY, Chen WC, Lai FI, Cheng CP, Kuo HC, Wang SC & Hsieh WF. 2006. Effects of Doping Concentration and Annealing Temperatur on Properties of Highly-Oriented Al-Doped ZnO Films. Elsevier. Journal of Crystal Growth. 287: 78-84

Lin YM, Chu CH, Wu HW, & Huang JL. 2015. Study of AZO thin films under different annealing atmosphere on structural, optical and electrical properties by rf magnetron sputtering. Proceedings of the International MultiConference of Engineers and Computer Scientists 2015 Vol II,IMECS 2015. Hong Kong. 807-810

Ming LY, Chien-Hsun C, Hung-Wei W, & Jow-Lay H. 2015. Study of AZO thin film under different annealing atmosphere on structural, optical and electrical properties by RF magnetron sputtering. Hongkong. Proceeding of the International Multi Conference of Engineers and Computer Scientiest. Vol. II IMECS 2015.

Sim KU, Shin SW, Moholkar AV, Yun JH, Moon JH, & Kim JH. 2010. Effect of dopant (Al, Ga, and In) on the Caracteristics of ZnO Thin Films Prepared by RF Magnetron Sputtering System. Curr Appl Phys 10: 5463-5467.

Sinaga. 2009. Pengaruh temperatur Annealing terhadap Struktur Mikro, Sifat Listrik, Sifat Optik Dari Film Tipis Oksida Konduktif Transparan ZnO: Al yang dibuat Dengan Teknik Screen Printing. Jurusan Pendidikan Fisika FPMIPA Universitas Pendidikan Indonesia. Jurnal Pengajaran MIPA

Suchea M, Christoulakis S, Katsarakis N,Kitsopoulos T & Kiriakidis G.2007.Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering. Thin Solid Films. 515: 6562-6566.

Suprayogi D. 2014. Pengaruh doping gallium oksida pada karakteristik film tipis seng oksida ditumbuhkan dengan metode dc magnetron sputtering. Skripsi. Semarang: FMIPA Unnes.

Syukron A, Risanti DD, & Sawitri D. 2013. Pengaruh preparasi pasta dan temperatur annealing pada dye-sensitized solar cells (DSSC) berbasis nanopartikel ZnO. Jurnal Teknik Pamits, 2(2) : 2337-3539.

Tao R, Tomita T, Wong RA, & Waki K. 2012. Electrochemical and Structural Analysis of Al-doped ZnO Nanorod arrays in dye-sensitized Solar Cell. Journal of Power Source. 214: 159-165

Wirjoadi S & Siswanto B. 2009. Influence of substrate temperature on structural, electrical and optical properties of ZnO:Al ThinFilms. Atom Indonesia. :115-125.

Yanti. 2013. Penumbuhan dan Karakterisasi Sifat Fisis Film Tipis ZnO doping Al dengan Metode DC Magnetron Sputtering. Skripsi. Semarang: FMIPA Unnes.

Zhou H, Yi D, Yu Z, Xiao L & Li J. 2007. Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties. Thin Solid Films 515: 6909-6914.


Refbacks

  • There are currently no refbacks.