VARIASI SUHU DEPOSISI PADA STRUKTUR, SIFAT OPTIK DAN LISTRIK FILM TIPIS SENG OKSIDA DENGAN DOPING GALIUM (ZNO:GA)

S. Sulhadi; F. Fatiatun; P. Marwoto; S. Sugianto; E. Wibowo

doi:10.15294/jpfi.v11i1.4007

VARIASI SUHU DEPOSISI PADA STRUKTUR, SIFAT OPTIK DAN LISTRIK FILM TIPIS SENG OKSIDA DENGAN DOPING GALIUM (ZNO:GA)

S. Sulhadi⁽¹⁾, F. Fatiatun⁽²⁾, P. Marwoto⁽³⁾, S. Sugianto⁽⁴⁾, E. Wibowo⁽⁵⁾,

DOI: https://doi.org/10.15294/jpfi.v11i1.4007

(1) Materials Research Group, Jurusan Fisika FMIPA Universitas Negeri Semarang Kampus Sekaran Gunungpati Semarang 50229
(2) Materials Research Group, Jurusan Fisika FMIPA Universitas Negeri Semarang Kampus Sekaran Gunungpati Semarang 50229
(3) Materials Research Group, Jurusan Fisika FMIPA Universitas Negeri Semarang Kampus Sekaran Gunungpati Semarang 50229
(4) Materials Research Group, Jurusan Fisika FMIPA Universitas Negeri Semarang Kampus Sekaran Gunungpati Semarang 50229
(5) Jurusan Teknik Fisika, Fakultas Teknik Universitas Telkom Jl. Telekomunikasi Terusan Buah Batu, Bandung 40257

Abstract

Telah dilakukan deposisi film tipis ZnO:Ga di atas substrat kaca korning pada tekanan deposisi 500 mtorr dengan metode DC-magnetron sputtering. Film ditumbuhkan masing-masing pada suhu 325^oC, 375^oC, dan 425^oC. Struktur, sifat optik dan sifat listrik film tipis yang dideposisikan telah dikarakterisasi dengan menggunakan EDX, XRD, SEM, spektrofotometer UV-Vis dan I-V Meter. Analisis EDX menunjukkan bahwa film yang terdeposisi merupakan film tipis ZnO:Ga. Hasil analisis struktur dengan XRD menunjukkan bahwa film tipis ZnO:Ga yang dideposisikan merupakan polikristalin dengan struktur heksagonal wurtzite. Film ZnO:Ga yang dideposisikan pada suhu 325^o mempunyai kualitas kristal yang lebih baik dibandingkan dengan film yang dideposisikan pada suhu 375^o dan 425^oC. Hasil XRD juga terkonfirmasi dengan observasi SEM menunjukkan bahwa film ZnO:Ga yang dideposisikan pada suhu 325^oC mempunyai ukuran butir yang lebih homogen dibandingkan dengan film yang ditumbuhkan pada suhu deposisi 375^o dan 425^oC. Film tipis ZnO:Ga yang ditumbuhkan pada suhu 325^oC mencapai transmitansi optik ~ 89% dan energi bandgap ~3,33 eV. Sifat listrik dapat diketahui dengan menggunakan I-V Meter yang menunjukkan nilai 1,74 x10ˉ³ (Ωcm)ˉ¹ pada suhu deposisi 325^oC.

Thin films ZnO:Ga were deposited on corning glass substrates with argon gas pressure 500 mtorr and variation temperature at 325^oC, 375^oC and 425^oC by DC-Magnetron Sputtering. The structural studies, optical and electricity properties of the thin films have been investigated by means of EDX, XRD, SEM, Uv-Vis spectroscopy and I-V meter. The EDX result show that thin films were deposited is ZnO:Ga thin films. The structural studies result from XRD show the ZnO:Ga thin films deposited have polycrystalline with the hexagonal wurtzite structure. ZnO:Ga film were deposited at 325^oC have the better quality crystal with the other. The XRD result also appropriate with SEM, it was shown at 325^oC has grain size more homogeny with the other films. Thin films ZnO:Ga was deposited at 325^oC has the optical transmittance ~89% and the bandgap ~3,33 eV. Electrical conductivity 1.74 x10ˉ³ (Ωcm)ˉ¹ at deposited 325^oC.

Keywords

Temperature Variation, Thin Film ZnO:Ga, Dc Magnetron Sputtering

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