PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu)

P. Marwoto, N.M. Darmaputra, Sugianto -, Z. Othaman, E. Wibowo, S.Y. Astuti

Abstract


Film tipis CdTe dengan doping tembaga (Cu) berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO) dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2%) terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM) dan hasil analisis struktur dengan X-Ray Diffraction (XRD) menunjukkan bahwa film CdTe:Cu(2%) mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2%) mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV), 725 nm (1,71 eV) dan 740 nm (1,67 eV). Film CdTe dengan doping Cu(2%) memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V) menunjukkan bahwa pemberian doping Cu(2%) dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%).


CdTe:Cu(2%) thin film has been successfully grown on Indium Tin Oxide (ITO) substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2%) doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM)  images and X-Ray Diffraction (XRD) results showed that CdTe:Cu(2%) thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2%) thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV), 725 nm (1.71 eV) and 740 nm (1.67 eV) however CdTe:Cu(2%) film shows sharper photoluminescence peak at band energy of 1.81 eV. Current-Voltage (I-V) measurement showed that the presenting of Cu doping on CdTe film configuration could decrease its electrical resistivity from 8.40x109 Ωcm to 6.92x105 Ωcm. Indeed, as absorber layer of solar cell, the performance of CdTe thin film has been succsesfully improved by using Cu(2%) as doping.


Keywords


Cu doping; CdTe; morphological structure; crystal structure; photoluminescence; resistivity

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DOI: https://doi.org/10.15294/jpfi.v8i2.2162

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